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Chapter One
Porous SiC Preparation,
Characterization and
Morphology
Y. Ke, Y. Shishkin, R.P. Devaty and W.J. Choyke
1.1 INTRODUCTION
The production and investigation of porous semiconductors began in the
1950s at Bell Laboratories with work by Uhlir Jr and Turner on
Si and Ge and at the Westinghouse Research Laboratories by Faust Jr
for SiC. Technological interest began with the discussion of the process
of insulation by porous oxidized Si in the 1970s. Interest in porous
Si exploded in 1990 when Canham at RSRE in the UK discovered
that highly porous layers of Si excited by a blue laser emit readily visible
red light at room temperature. The origin of this above band gap luminescence
was a topic of heated controversy for several years. We became
interested in the possibility of blue shifted luminescence into the ultra-violet
(UV) in porous SiC, and began to collaborate with Joseph Shor
and colleagues, who were actively investigating electrochemical etching
of SiC at Kulite Semiconductor products and Columbia Univ ... read full excerpt from Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications ebook
