Device Modeling for Analog and RF CMOS Circuit Design
Chapter One
MOSFET Device Physics
and Operation
1.1 INTRODUCTION
A field effect transistor (FET) operates as a conducting semiconductor channel with two
ohmic contacts - the source and the drain - where the number of charge carriers in the
channel is controlled by a third contact - the gate. In the vertical direction, the gate-channel-substrate
structure (gate junction) can be regarded as an orthogonal two-terminal
device, which is either a MOS structure or a reverse-biased rectifying device that controls
the mobile charge in the channel by capacitive coupling (field effect). Examples of FETs
based on these principles are metal-oxide-semiconductor FET (MOSFET), junction FET
(JFET), metal-semiconductor FET (MESFET), and heterostructure FET (HFETs). In all
cases, the stationary gate-channel impedance is very large a ... read full excerpt from Device Modeling for Analog and RF CMOS Circuit Design ebook
